研讨方向

研讨方向涉及III-V族、II-V族半导体材料、硅基发光材料,稀土发光材料、high-K微电子介质材料和储能材料,宽禁带透明导电材料、自旋电子学材料。长期从事分子束外延、MOCVD半导体材料外延生长和原子层沉积、PECVD、电子束蒸发、磁控溅射和薄膜沉积技能研讨工作。近年来致力于以原子层为单位的数字化材料合成技能和新型纳米薄膜光电子器件研制工作, 利用原子层沉积方法研制具备特定地质性质的各类纳米复合结构功能薄膜材料,或者对半导体低维结构,石墨烯等二维材料表面进行沉积改性,以增强其性能或稳定性。应用领域涉及半导体光电子学薄膜材料与器件、复合纳米光电子功能材料与器件、电池等能源材料与器件。

个人简历

讲解经历:
1995/9-1998/7,中国科企业长春光机与地质所,凝聚态地质硕士,导员:范希武研讨员
1991/9-1994/7,中国科企业光机与地质所,凝聚态地质硕士,导员:范希武,钟国柱研讨员
1987/9-1991/7,吉林企业,固体地质学专长硕士,导员:杨玉琨导员
 
研讨经历:
2015/7-至今,三昇体育平台,三昇体育官网,导员
2006/10-2015/6,三昇体育平台,地质企业,导员,筹建了硅光子学与储能器件实验室,从事原子层沉积技能和纳米复合光电子功能材料和器件研讨工作。
2001/10-2006/9,德国开姆尼茨罗森道夫研讨中心离子束地质和材料研讨所,硕士后,从事高效率硅基电致发光器件的研讨工作,导员:M.Helm导员和W.Skorupa硕士
2000/9-2001/9,日本东京企业工学部电子科技部,硕士后,从事分子束外延和Mn掺杂III-V族稀磁半导体自旋电子学材料研讨工作。导员:田中雅明
1998/9-2000/10,中国科企业地质研讨所,硕士后。从事分子束外延和III-V族半导体量子阱光折变材料和器件,半导体量子阱微腔激光器研讨工作。导员:周均明研讨员
1991/9-1998/7  硕士和硕士硕士生,利用电子束蒸发和磁控溅射高真空薄膜沉积技能研制交往薄膜电致发光计算机平板显示器和硅基复合蓝色光致发光和电致发光器件。

代表性成果


1. Near-infrared electroluminescence from metal-oxide-semiconductor devices with erbium-doped gadolinium oxide on silicon,

    Chunyan Jin, Junqing Liu*, and Jiaming Sun*, Appl. Phys. Lett. 114, 211102 (2019). https://doi.org/10.1063/1.5084016.

2. Growth of ultrathin SnO2 on carbon nanotubes by atomic layer deposition and their application in lithium ion battery anodes, Shengyun Zhu, Junqing Liu*, Jiaming Sun*, Applied Surface Science 484 (2019) 600–609, https://doi.org/10.1016/j.apsusc.2019.04.163.

3. Precise growth of Al2O3/SnO2/CNTs composites by a two-step atomic layer deposition and their application as an improved anode for lithium ion batteries, Shengyun Zhu, Junqing Liu*, Jiaming Sun** ,Electrochimica Acta 319 (2019) 490-498. https://doi.org/10.1016/j.electacta.2019.07.027.

4. Energy transfer under electrical excitation and enhanced electroluminescence in the nanolaminate Yb,Er Co-Doped Al2O3 Films, Yang Yang, Zhongtao Ouyang, Jianzhao Liu, Jiaming Sun, Phys. Status Solidi RRL, (2019), 1900137 (p1-5). https://doi.org/10.1002/pssr.201900137.

5. Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown

    on   Silicon by Atomic Layer Deposition. Junpeng Li, Jianzhuo Wu, Junqing Liu* and Jiaming Sun*, Nanoscale Research Letters,

    14,(2019) 75 (p1-7) , https://doi.org/10.1186/s11671-019-2907-0.

6. Structure and dielectric property of high-k ZrO2 films grown by atomic layer deposition using tetrakis(dimethylamido)zirconium and ozone, Junqing Liu, Junpeng Li, Jianzhuo Wu and Jiaming Sun*, Nanoscale Research Letters 14(2019) 154P1-12. https://doi.org/10.1186/s11671-019-2989-8.

7. Blue electroluminescent Al2O3/Tm2O3 nanolaminate films fabricated by atomic layer depositionon silicon, Yao Liu, Zhongtao Ouyang, Li Yang, Yang Yang and Jiaming Sun, Nanomaterials 9, (2019) 413(1-10).


8. Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon, Zhongtao Ouyang, Yang Yang?, Jiaming Sun? Optical Materials 80(2018) 209-215.

9. Near-infrared electroluminescence from atomic layer doped Al2O3:Yb nanolaminate films on silicon, Zhongtao Ouyang, Yang Yang, Jiaming Sun, Scripta Materialia,Scripta Materialia 151, 1 July 2018, P 1-5

10. Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon,Yang Yang, Na Li, and Jiaming SunOptics Express 26( 7), 2 Apr (2018), 9344-9350.

11.硅基光电子发光材料与器件/杨德仁等著, 撰写章节:第四章,稀土离子掺杂的硅基电致发光器件,P-79-99,北京, 科技出版社, 2016.1ISBN 978-7-03- 0046179-7

12. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone, Chunyan Jin, Ben Liu, Zhongxiang Lei and Jiaming Sun* Nanoscale Research Letters 10, 95 p1-9 (2015).

13 Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition, L. Rebohle, M. Braun, R. Wutzler, B. Liu, J.M. Sun, M. Helm, W. Skorupa Appl. Phys. Lett. 104, 251113 (2014).http://dx.doi.org/10.1063/1.4885418

14.Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition,

     Qiongqiong Hou, Fanjie Meng and Jiaming Sun, Nanoscale Research Letters 8, 144 (2013).
15.Highly efficient silicon light emitting diodes produced by doping engineering,

     Jianming Sun, M. Helm, W. Skorupa, B. Schmidt, A. Mücklich, Frontiers of Optoelectronics, 5(1), 7-12(2012).
16.Light emissionfrom ion-implanted silicon, J. M. Sun, M. Helm, W. Skorupa, B. Schmidt, and A. Mücklich,

     Phys. Status Solidi C 6 (3), 716-720 (2009).
17.Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer,

     J. M. Sun, L. Rebohle, S. Prucnal, M. Helm, and W. Skorupa, Appl. Phys. Lett. 92, 071103 (2008).
18.Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions,

     J. M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 89, 091908 (2006)
19.Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,

     J. M. Sun, W. Skorupa, T. Dekorsy , and M. Helm, J. Appl. Phys. 97, 123513 (2005).
20.Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device,

     J. M. Sun, W. Skorupa, T. Dekorsy, and M. Helm, Appl. Phys. Lett. 85, 3387 (2004).
21.Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes,

     J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, A. Mücklich, and M. Helm, Phys. Rev. B 70, 155316 (2004).

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